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HiPerFASTTM IGBT LightspeedTM Series
IXGA 24N60C IXGP 24N60C
VCES IC25 VCE(sat)typ tfi typ
= 600 V = 48 A = 2.1 V = 60 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 600 600 20 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
TO-220 AB (IXGP)
C (TAB)
G CE
TO-263 AA (IXGA)
G
E
C (TAB)
G = Gate, E = Emitter, Features
C = Collector, TAB = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-263 TO-220
1.13/10 Nm/lb.in. 2 4 g g
International standard packages JEDEC TO-247 and surface mountable TO-268 High frequency IGBT High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 150C 5 200 1 100 2.1 2.5 V V A mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC110, VGE = 15 V
(c) 2002 IXYS All rights reserved
98936 7/02)
IXGA 24N60C IXGP 24N60C
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 17 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 120 40 55 IC = IC110, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC110, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC110, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 13 17 15 25 75 60 0.24 15 25 0.15 130 110 0.6 140 110 0.36 S pF pF pF nC nC nC
Dim. Pins: 2 - Collector 4 - Collector Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 1 - Gate 3 - Emitter Bottom Side
TO-220 AB Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC110; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
ns ns ns ns mJ ns ns mJ ns ns mJ 0.83 K/W
A B C D E F G H J K M N Q R
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
TO-263 AA Outline
0.25
K/W
Min. Recommended Footprint (Dimensions in inches and mm)
1. 2. 3. 4. Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Gate Collector Emitter Collector Botton Side Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 6,306,728B1 5,381,025

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